STW6NA80 sth6na80fi n - channel 800v - 1.8 w - 5.4a - to-247/isowatt218 fast power mos transistor n typical r ds(on) = 1.8 w n avalance rugged technology n 100% avalanche tested n repetitive avalanche data at 100 o c n low gate charge n very high current capability n application oriented characterization applications n high current, high speed switching n solenoid and relay drivers n regulators n dc-dc & dc-ac converters n motor control, audio amplifiers n automotive environment (injection, abs, air-bag, lampdrivers, etc.) ? internal schematic diagram absolute maximum ratings symbol parameter value unit STW6NA80 sth6na80fi v ds drain-source voltage (v gs = 0) 800 v v dgr drain- gate voltage (r gs = 20 k w ) 800 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 o c 5.4 3.4 a i d drain current (continuous) at t c = 100 o c 3.4 2.1 a i dm ( ) drain current (pulsed) 22 22 a p tot total dissipation at t c = 25 o c 150 60 w derating factor 1.2 0.48 w/ o c v iso insulation withstand voltage (dc) ? 4000 v t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area type v dss r ds(on) i d STW6NA80 sth6na80fi 800 v 800 v < 2.2 w < 2.2 w 5.4 a 3.4 a october 1998 1 2 3 to-247 isowatt218 1 2 3 1/10
thermal data to-247 isowatt218 r thj-case thermal resistance junction-case max 0.83 2.08 o c/w r thj-amb r thc-sink t l thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 30 0.1 300 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d < 1%) 5.4 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 50 v) 150 mj e ar repetitive avalanche energy (pulse width limited by t j max, d < 1%) 5.8 mj i ar avalanche current, repetitive or not-repetitive (t c = 100 o c, pulse width limited by t j max, d < 1%) 3.4 a electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 800 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating x 0.8 t c = 100 o c 25 50 m a m a i gss gate-body leakage current (v ds = 0) v gs = 30 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 2.25 3 3.75 v r ds(on) static drain-source on resistance v gs = 10 v i d = 3 a v gs = 10 v i d = 3 a t c = 100 o c 1.8 2.2 4.4 w w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 5.4 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d = 3 a 3 5.5 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 1250 140 35 1700 190 50 pf pf pf STW6NA80-sth6na80fi 2/10
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 400 v i d = 3 a r g = 4.7 w v gs = 10 v (see test circuit, figure 3) 40 100 55 135 ns ns (di/dt) on turn-on current slope v dd = 640 v i d = 6 a r g = 47 w v gs = 10 v (see test circuit, figure 5) 180 a/ m s q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 640 v i d = 6 a v gs = 10 v 55 8 24 75 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 640 v i d = 6 a r g = 47 w v gs = 10 v (see test circuit, figure 5) 75 25 110 100 35 150 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 5.4 22 a a v sd ( * ) forward on voltage i sd = 6 a v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 6 a di/dt = 100 a/ m s v dd = 100 v t j = 150 o c (see test circuit, figure 5) 800 15.2 38 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area safe operating area for to-247 safe operating area for isowatt218 STW6NA80-sth6na80fi 3/10
thermal impedance for to-247 derating curve for to-247 output characteristics thermal impedance for isowatt218 derating curve for isowatt218 transfer characteristics STW6NA80-sth6na80fi 4/10
transconductance gate charge vs gate-source voltage normalized gate threshold voltage vs temperature static drain-source on resistance capacitance variations normalized on resistance vs temperature STW6NA80-sth6na80fi 5/10
turn-on current slope cross-over time accidental overload area turn-off drain-source voltage slope switching safe operating area source-drain diode forward characteristics STW6NA80-sth6na80fi 6/10
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times STW6NA80-sth6na80fi 7/10
dim. mm inch min. typ. max. min. typ. max. a 4.7 5.3 0.185 0.209 d 2.2 2.6 0.087 0.102 e 0.4 0.8 0.016 0.031 f 1 1.4 0.039 0.055 f3 2 2.4 0.079 0.094 f4 3 3.4 0.118 0.134 g 10.9 0.429 h 15.3 15.9 0.602 0.626 l 19.7 20.3 0.776 0.779 l3 14.2 14.8 0.559 0.413 0.582 l4 34.6 1.362 l5 5.5 0.217 m 2 3 0.079 0.118 dia 3.55 3.65 0.140 0.144 p025p to-247 mechanical data STW6NA80-sth6na80fi 8/10
dim. mm inch min. typ. max. min. typ. max. a 5.35 5.65 0.210 0.222 c 3.3 3.8 0.130 0.149 d 2.9 3.1 0.114 0.122 d1 1.88 2.08 0.074 0.081 e 0.75 1 0.029 0.039 f 1.05 1.25 0.041 0.049 g 10.8 11.2 0.425 0.441 h 15.8 16.2 0.622 0.637 l1 20.8 21.2 0.818 0.834 l2 19.1 19.9 0.752 0.783 l3 22.8 23.6 0.897 0.929 l4 40.5 42.5 1.594 1.673 l5 4.85 5.25 0.190 0.206 l6 20.25 20.75 0.797 0.817 m 3.5 3.7 0.137 0.145 n 2.1 2.3 0.082 0.090 u4.6 0.181 l1 a c d e h g m f l6 123 u l5 l4 d1 n l3 l2 p025c isowatt218 mechanical data STW6NA80-sth6na80fi 9/10
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a registered trademark of stmicroelectronics ? 1998 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the neth erlands - singapore - spain - sweden - switzerland - t aiwan - thailand - united kingdom - u.s.a. http://www.st.com . STW6NA80-sth6na80fi 10/10
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